Dr. Raymond Phaneuf, Selected Publications

98. “Nanoscale Corrosion Barrier for Silver Museum Artifacts by Atomic Layer Deposition,” Amy Marquardt, Eric M. Breitung, Richard Ash, Terry Drayman-Weisser, Glenn Gates, and R. J. Phaneuf, in preparation (2018).

97. “Orientation of tetranitro zinc phthalocyanine and phenyl-C61-butyric acid methyl ester molecules, pure and mixed deposited on semiconductors surfaces,” Miriam Cezza, and R. J. Phaneuf, in preparation (2018).

96. “Crystallization of phenyl-C61-butyric acid methyl ester from tetranitro zinc phthalocyanine/phenyl-C61-butyric acid methyl ester molecular mixtures on Si(111) during slow rates of solvent evaporation,” Miriam Cezza, Colin S. Qualters, R. J. Phaneuf, in preparation (2018).

95. “Relaxation of Surface Nano-Patterns on Poly Alpha Methyl Styrene during Annealing above the Glass Transition Temperature,” Tsung-Cheng Lin, Robert L. Bruce, Gottlieb S. Oehrlein, Brian K. Long, C. Grant Willson, Hung-Chih Kan and R. J. Phaneuf, in preparation (2018).

94. "Effective Lifetimes and Reversibility of  Atomic Layer Deposited Diffusion Barrier Films for Preserving Silver Artifacts", Amy E. Marquardt, Eric Breitung, Glenn Gates, Richard Ash, Terry Drayman-Weisser, and Raymond J. Phaneuf, in preparation (2018).

93. "Diffusivity Model for Protecting Silver Artifacts using Atomic Layer Deposited Diffusion Barrier Films", Amy E. Marquardt, Damiano Giubertoni, Glenn Gates, Eric Breitung, Terry Drayman-Weisser, and Raymond J. Phaneuf, in preparation (2018).

92. "Assembly of PCBM and tn-ZnPc molecular domains and phase separation of molecular mixtures from liquid solution on Si (111)", Miriam Cezza, Colin S. Qualters, and Raymond J. Phaneuf, Langmuir 33 13657-13668 (2017). 

91. “Protecting silver cultural heritage objects with atomic layer deposited corrosion barriers”, Amy E. Marquardt, Eric M. Breitung, Terry Drayman-Weisser, Glenn Gates, and R. J. Phaneuf, Heritage Science, 3, 1 (2015).

90. “Nanostructured TiO2 for stone coating: assessing compatibility with basic stone’s properties and photocatalytic effectiveness,” M. Lettieri, A. Licciulli, Amy E. Marquardt, W. Freedman, R. Phaneuf, A. Calia,  Bulletin of Engineering Geology and the Environment, 1-14 (2015).

89. “Extended extinction spectrum from gold nanopillar arrays: absorbance vs. scattering in a bulk heterojunction organic solar cell,” S.-J. Tsai, M. Ballarotto, and R. J. Phaneuf, Energies 8, 1547-1560 (2015).

88. “Directed Kinetic Self-Assembly of Mounds on Patterned GaAs(001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth”, Chuan-Fu Lin, Hung-Chih Kan, S. Kanakaraju, C.J.K. Richardson, and R.J Phaneuf, Nanomaterials 4, 344 (2014).

87.  “Impact of Interface Roughness on the Fabrication of Broadband Blackbody Absorber Based on Dielectric-Thin Metal Film Multilayers”, Shy-Hauh Guo, Andrei B. Sushkov, Dong Hun Park, H. Dennis Drew, Paul W. Kolb, Warren N. Herman, and Raymond J. Phaneuf, Optics Express 22, 1952-1962 (2014). 

86. “Characterization of Atomic Layer Deposited Films as Diffusion Barriers for Silver Art Objects”, (invited)  A. E. Marquardt, E. M. Breitung, T. Drayman-Weisser, G. Gates, G. W. Rubloff, and R. J. Phaneuf,  ECS Transactions58, 277 (2013).

85. “Growth instability on GaAs(001): Evidence for Large Characteristic Length Scale,” Chuan-Fu Lin, Hung-Chih Kan, S. Kanakaraju, C.J. Richardson, R.J Phaneuf, Journal of Crystal Growth381,  83 (2013) .

84. “Broadband and Mid-Infrared Absorber Based on Dielectric-Thin Metal Film Multilayers,” Timothy D. Corrigan, Dong Hun Park, H. Dennis Drew, Shy-Hauh Guo, Paul W. Kolb, , W. N. Herman, and Raymond J. Phaneuf, Applied Optics51, 1109 (2012).

83. “Direct and quantitative evidence for buckling instability as a mechanism for roughening of polymer during plasma etching”, T.-C. Lin, R. L. Bruce, G. S. Oehrlein, R. J. Phaneuf, and H.-C. Kan, Applied Physics Letters 100, 233113 (2012).

82. “Directing Self Assembly of Nanostructures Kinetically: Patterning and the Ehrlich Schwoebel Barrier,” Chuan-Fu Lin, Ajmi BH Hammouda, Hung-Chih Kan, N.C. Bartelt and R J Phaneuf, Physical Review B 85, 085421 (2012).

81. “Diffusion of a Ga adatom on the GaAs(001)–c(4×4)–heterodimer surface: A first-principles study,” J.L. Roehl, S. Aravelli, S.V. Khare, and R.J. Phaneuf, Surface Science 606 1303 (2012).

80. "Suppression of long-range collective effects in meta-surfaces formed by plasmonic antenna pairs", S. Mousavi, S. Hossein, Alexander B. Khanikaev, Burton Neuner, David Y. Fozdar, Timothy D. Corrigan, Paul W. Kolb, H. Dennis Drew, Raymond J. Phaneuf, Andrea Alù, and Gennady Shvets, Optics Express 19, 22142 (2011).

79. “On the absence of post-plasma etch surface and line edge roughness in vinylpyridine resists,” R. L. Bruce, F. Weilnboeck, T. Lin, R. J. Phaneuf, G. S. Oehrlein, B. K. Long, C. G. Willson and A. Alizadeh, J. Vac. Sci. Technol. B 29, 041604 (2011).

78. “Plasma-Polymer Interactions: A Review of Progress in Understanding Polymer Resist Mask Durability during Plasma Etching for Nanoscale Fabrication,” (invited) G. S. Oehrlein, R. J. P., and D. B. Graves, Journal of Vacuum Science and Technology B 29, 010801 (2011).

77. “Binding Sites and Diffusion Barriers of a Ga Adatom On The GaAs(001)-c(4×4) Surface From First-Principles Computations,” J. L. Roehl, A. Kolagatla, V. K. K. Ganguri, S. V. Khare, and R. J. Phaneuf, Physical Review B 82, 165335 (2010).

76. “Effect of Gold Nanopillar Arrays on the Absorption Spectrum of a Bulk Heterojunction Organic Solar Cell,” S.-J. Tsai, M. Ballarotto, D. B. Romero,W. N. Herman, H.-C. Kan and R. J. Phaneuf, Optics Express 18, A528 (2010).

75. “Wood’s anomaly in arrays of highly anisotropic plasmonic antennas,” T. D. Corrigan, P. W. Kolb, H. D. Drew, R. J. Phaneuf, A. Khanikaev, H. Mossavi, and G. Shvets, Optics Express 18, 24025 (2010).

74. “Bianisotropy and spatial dispersion in highly anisotropic near-infrared resonator arrays,” P. W. Kolb, T. D. Corrigan, H. D. Drew, A. B. Sushkov, R. J. Phaneuf,  A. Khanikaev, H. Mousavi, and G. Shvets, Optics Express 18,. 24025-24036 (2010).

73.  “Molecular structure effects on dry etching behavior of Si-containing resists in oxygen plasma,” R. L. Bruce, T. Lin, R. J. Phaneuf, G. S. Oehrlein, W. Bell, B. Long, and C. G. Willson  Journal of Vacuum Science and Technology B 28, 751 (2010).

72. “Relationship between nanoscale roughness and ion-damaged layer in argon plasma exposed polystyrene films,”  R. L. Bruce, F. Weilnboeck, T. Lin, R. J. Phaneuf, G. S. Oehrlein, B. K. Long, C. G. Willson, J. J. Vegh, D. Nest, and D. B. Graves , Journal of  Applied Physics 107, 084310 (2010).

71.  “Spacer Layer Effect in Fluorescence Enhancement from Silver Nanowires over a Silver Film; Switching of Optimum Polarization”, Shy-Hauh Guo, Dominic G. Britti, Julia J. Heetderks, Hung-Chih Kan, and Raymond J. Phaneuf , Nano Letters 9, 2666-2670 (2009).

70. “Enhanced fluorescence by metal nanospheres on metal substrates”, S. D'Agostino, P. P. Pompa, R. Chiuri, R. J.  Phaneuf, R. Rinaldi, R. Cingolani and F. Della Sala, Optics Letters 34, 2381-2383 (2009).

69. “Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4F8- and CF4-based discharges”, S. Engelmann2, R. L. Bruce2, F. Weilnboeck, M. Sumiya, T. Kwon1, R. J. Phaneuf, G. S. Oehrlein, C. Andes, D. Graves, D. Nest, and E. A. Hudson, Journal of Vacuum Science and Technology B27, 1165-1179 (2009).

68. “Study of ion and vacuum ultraviolet-induced effects on styrene- and ester-based polymers exposed to argon plasma”, R. L. Bruce, S. Engelmann, T. Lin, T. Kwon, R. J. Phaneuf, and G. S. Oehrlein, B. K. Long and C. G. Willson, J. J. Végh, D. Nest, and D. B. Graves, and A. Alizadeh, Journal of Vacuum Science and Technology B27, 1142-1155 (2009).

67. “Real-time studies of surface roughness development and reticulation mechanism of advanced photoresist materials during plasma processing”, A. R. Pal, R. L. Bruce2, F. Weilnboeck, S. Engelmann2, T. Lin1, M.-S. Kuo, R. Phaneuf, and G. S. Oehrlein, Journal of Applied Physics 105, 013311-1,-9 (2009).

66. “Plasma-surface interactions of advanced photoresists with C4F8 /Ar discharges: Plasma parameter dependencies”, S. Engelmann2, R. L. Bruce2, M. Sumiya, T. Kwon1, R. Phaneuf, G. S. Oehrlein, C. Andes, D. Graves, D. Nest and E. A. Hudson, Journal of Vacuum  Science and Technology B 27, 1071-1023 (2009).

65. “Rectification in Supramolecular Zinc Porphyrin/Fulleropyrrolidine Dyads Self-Organized on Gold(111),” Francesca Matino, Valentina Arima, Manuel Piacenza, Fabio Della Sala, Giuseppe Maruccio, Ray J. Phaneuf , Roberta Del Sole, Giuseppe Mele, Giuseppe Vasapollo, Giuseppe Gigli, Roberto Cingolani, Ross Rinaldi, ChemPhysChem 10, 2633 (2009).

64.  “Optical plasmonic resonances in split-ring resonator structures: an improved LC model”, T. D. Corrigan, P. W. Kolb, A. B. Sushkov, H. D. Drew, D. C. Schmadel, and R. J. Phaneuf, Optics Express 16, 19850-19864 (2008).

63. “Enhanced fluorescence and near-field intensity for Ag nanowire/nanocolumn arrays: evidence for the role of surface plasmon standing waves”, Shy-Hauh Guo, Julia J. Heetderks, Hung-Chih Kan, and Raymond J. Phaneuf, Optics Express 16, 18417-18425 (2008). (Selected for publication in the Virtual Journal for Biomedical Optics).

62. “Anomalous scaling in epitaxial growth on vicinal surfaces: meandering and mounding instabilities in a linear growth equation with spatiotemporally correlated noise”, Ajmi B.H. Hammouda*, A. Pimpinelli and R.J. Phaneuf, Surface Science 602, 2819-2827 (2008).

61. “Characteristic Length Scales in Evolution of Patterned Step Structure on Vicinal Si(111) Surface During High Temperature Annealing”, H-C. Kan, T. Kwon1 and R. J. Phaneuf, Physical Review B 77, 205401-1,-6 (2008) (Selected for the May 12, 2008 issue of Virtual Journal of Nanoscale Science & Technology, published by the American Institute of Physics and the American Physical Society).

60.  “Fluorescence Enhancement from Size-selected Nanoparticles: The Role of an Active Substrate Substrate”, S.-H. Guo, S.-J. Tsai, H.-C. Kan, D.-H. Tsai, Michael R. Zachariah, and R. J. Phaneuf, Advanced Materials20, 1424-1429 (2008).

59.  “Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation”, J. J. Végh*, D. Nest, D. B. Graves, R. Bruce2, S. Engelmann2, T. Kwon1, R. J. Phaneuf, G. S. Oehrlein, B. K. Long and C. G. Willson, Applied Physics Letters, 233113-1,-3 (2007).

58. “Plasma-surface interactions of model polymers for advanced photoresists using C4F8 /Ar discharges and energetic ion beams”, S. Engelmann, R. L. Bruce, T. Kwon, R. Phaneuf, G. S. Oehrlein, Y. C. Bae, C. Andes, D. Graves and D. Nest, E. A. Hudson, P. Lazzeri, E. Iacob, and M. Anderle, Journal of Vacuum Science and Technology 25, 1353-1364 (2007).

57. “Spatial and Size-Resolved Electrostatic-Directed Deposition of Nanoparticles on a Field-Generating Substrate: Theoretical and Experimental Analysis”, D.-H. Tsai, T. Hawa, H.-C. Kan, R. J. Phaneuf, and M. R. Zachariah, Nanotechnology 18, 365201-36510 (2007). 

56.  “Transient Roughening Behavior and Spontaneous Pattern Formation during Plasma Etching of Nanoporous Silica”, T. Kwon, H.-C. Kan, G. S. Oehrlein, and R.J. Phaneuf, Nanotechnology18, 055305-055309 (2007).  

55. “Temperature-Driven Change in the Unstable Growth Mode on Patterned GaAs(001)”, T. Tadayyon-Eslami, H.-C. Kan, L. C. Calhoun and R. J. Phaneuf, Physical Review Letters 97, 126101-1,-4 (2006).

54. “Evolution of Patterned GaAs(001) during Homoepitaxial Growth: Size vs. Spacing,”  H.-C. Kan3, R. Ankam, S. Shah, K.M. Micholsky,  T. Tadayyon-Eslami, L. Calhoun, and R. J. Phaneuf, Phys. Rev. B 73, 195410-1,-8 (2006).

53. “A Systematic Study of the Size and Spacing Dependence of Ag Nanoparticle Enhanced Fluorescence Using Electron Beam Lithography,” T. D. Corrigan, S.-H. Guo, H. Szmacinski, and R. J. Phaneuf, Applied Physics Letters 88, 101112-1,-3 (2006).

52.  “Length-Scale Dependence of the Step Bunch Self-Organization on Patterned Vicinal Si(111) Surfaces”, T. Kwon, H-C. Kan and R. J. Phaneuf, Applied Physics Letters 88, 071914-1-3 (2006).

51.  “Electrostatic-Directed Deposition Of Nanoparticles On A Field Generating Substrate,” D-H Tsai, S. H. Kim, T. D. Corrigan, R J Phaneuf, and M.R. Zachariah, Nanotechnology 16 (2005) 1856–1862.

50. “Enhanced Fluorescence from Periodic Arrays of Silver Nanoparticles,” (Invited), T. D. Corrigan, S.-H. Guo, R. J. Phaneuf, and H. Szmacinski, Journal of Fluorescence15, 779, (2005).

49. “Direct imaging of forces in scanning tunneling microscopy (STM) tunneling to a silicon pn junctions”, Jeong Young Park,  R. J. Phaneuf,  D. F. Ogletree,  and M. Salmeron, Applied Physics Letters 86, 172105 (2005).

48. “Transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth”, H.-C. Kan, S. Shah, T.T. Tadyyon-Eslami and R.J. Phaneuf, Physical Review Letters 92, 146101-1,-4 (2004).

47.  “Patterning-based Investigation of the length-scale dependence of the surface evolution during multilayer epitaxial growth”, S. Shah, K. Limpaphayom, T. Tadayyon-Eslami, H. C. Kan and R. J. Phaneuf, Applied Physics Letters 83, 4330-4332 (2003).

46. Investigation of the direct electromigration term for Al nanodots within the depletion zone of a pn junction”, J. Y. Park and R. J. Phaneuf, Journal of Applied Physics 94, 6883-6886 (2003).

45.  “Low Energy Electron Microscopy: Imaging Surface Dynamics”, (Invited) R. J. Phaneuf and A. K. Schmid, Physics Today56(3), 50-55 (2003).

44.  “Conductance Imaging of Thermally Desorbed Silicon Oxide”, J. Y. Park and R. J. Phaneuf, Journal of Vacuum Science and Technology B21, 1254-1257 (2003).

43.  “Time Response in Tunneling to a PN Junction,” J. Y. Park and R. J. Phaneuf, Applied Physics Letters 82, 64-66 (2003).

42. “Comparison Between Experimental Characterization and Electron Optical Simulation of the Astigmatism of a Magnetic Prism in LEEM”, H. C. Kan, D. Auerbach  and R. J. Phaneuf, Review of Scientific Instruments74, 1008-1015 (2002).

41. “A Comparison of Stigmatically Focusing Magnetic Prisms of Square vs. Round Symmetries”, H. C. Kan, T. Dürkop and R. J. Phaneuf, Journal of Vacuum Science and Technology B 20, 2519-2525 (2002).

40. “Photoelectron Emission Microscopy of Ultrathin Oxide-Covered Devices”, V. W. Ballarotto, M. Breban, K. Siegrist, R. J. Phaneuf, and E. D. Williams, Journal of Vacuum Science and Technology B 20, 2514-2518 (2002).

39.  “Spectroscopy of an Ensemble of In0.50Ga0.50As Quantum Dots Following Highly Localized Hole Injection by a Scanning Tunneling Microscope”, T.K. Johal, G. Pagliara, R. Rinaldi, A. Passaseo  R. Cingolani, M. Lomascolo, A. Taurino,  M. Catalano and R. J. Phaneuf, Physical Review B 66, 155313-1, -6 (2002).

38.  “Polarity-dependence in pulsed scanning tunneling microscopy fabrication and modification of metal nanodots on silicon,” J. Y. Park and R.J. Phaneuf, Journal of Applied Physics 92, 2139-2143 (2002).

37.  “Direct imaging of a biased pn junction with conductance mapping”, J. Y. Park, E.D. Williams and R. J. Phaneuf, Journal of Applied Physics 91, 3745-3749 (2002).

36.  “A quick estimation of the LEED pattern size formed by an electrostatic objective lens in LEEM”, H.-C. Kan and R. J. Phaneuf, Optik 112, 511-514 (2001).

35.  “A Model for Doping-Induced Contrast in PEEM”, V. W. Ballarotto, K. Siegrist, R. J. Phaneuf and E. D. Williams, Journal of Applied Physics91, 469-475 (2001).

34.  “Photon Energy Dependence of Contrast in Photoelectron Emission Microscopy of Si Devices”, V. W. Ballarotto, K. Siegrist, R. J. Phaneuf, E. D. Williams, W. C. Yang and R. J. Nemanich, Journal of Applied Physics91, 469-475 (2001).

33.  “Focusing of low energy electrons by sub-micrometer patterned structures in LEEM”, H.-C. Kan and R. J. Phaneuf, Journal of Vacuum Science and Technology B 19, 1158-1163 (2001).

32.  “Scanning Tunneling Spectroscopy of Field Induced Au Nanodots on Ultrathin Oxides on Si(001)”, J. Y. Park, R. J. Phaneuf and E. D. Williams, Journal of Vacuum Science and Technology B 19, 523-526 (2001).

31.  “Variation of threshold field in field induced fabrication of Au nanodots on ultrathin in situ grown silicon oxide”, J. Y. Park, R. J. Phaneuf and E. D. Williams, Surface Science 470, L69-L74 (2000).

30.  “Imaging the Band-Bending Across a PN-Junction Using Scanning X-ray Photoelectron Microscopy”, R. J. Phaneuf, H.-C. Kan, M. Marsi, L. Gregoratti, S. Günther and M. Kiskinova, Journal of Applied Physics88, 863-868 (2000).

29.  “PEEM Imaging of Dopant Contrast in Si(001)”, V. W. Ballarotto, K. Siegrist, R. J. Phaneuf, E. D. Williams and S. Mogren, Surface Science461, L571-L574 (2000).

28.  “Growth Morphologies in GaAs and InP Molecular Beam Epitaxy”, G. Lengel, R. J. Phaneuf, E.D. Williams, S. D. Sarma, W. Beard, and F. G. Johnson, Physical Review B 60, R8469-R8472 (1999).

27.  "Equilibration of Ring-Cluster Surface Phases and Silicide Islands for Cobalt adsorbed on Si(111)", R. J. Phaneuf, P. A. Bennett, M. Marsi, S. Günther, L. Gregoratti and M. Kiskinova, Surface Science431, 232-241 (1999).

26.  “Ni/Si(111) system: Formation and Evolution of two- and three-dimensional phases studied by spectromicroscopy”, L. Gregoratti, S. Günther, J. Kovac, M. Marsi, R. J. Phaneuf and M. Kiskinova, Physical Review B 59, 2018-2024, (1999).

25.  “LEEM Studies of Phase Separations and Surface Depletion of Co and Ni on Si(111)”,  R. J. Phaneuf and P. A. Bennett, Surface Review and Letters  5, 1179-1188, (1999).

24.  "Low Energy Electron Microscopy Studies of 2D Eutectic Behavior for the growth of Cobalt on Si(111)", (Invited) R. J. Phaneuf, Y. Hong, S. Hörch  and P. A. Bennett, Micron 30, 13-20, (1998).

23.  "Lateral pn Junction Characterization with Scanning Tunneling Microscopy: Junction Delineation and Depletion Zone Measurements", M. L. Hildner, R. J. Phaneuf and E. D. Williams, Applied Physics Letters 72, 3314-3316, (1998).

22.  "Photoemission Electron Microscopy of Schottky Contacts", M. Giesen, R. J. Phaneuf, E.D. Williams, and T. L. Einstein, Surface Science 396, 411-421, (1998).

21.  "Characterization of P-N Junctions and Surface States on Silicon Devices by Photoemission Electron Microscopy," (Invited) M. Giesen, R. J. Phaneuf, E.D. Williams, T. L. Einstein and H. Ibach, Applied Physics A 64, 423-430 (1997).

20.  “Two Dimensional Phase Separation for Co Adsorbed on Si(111),” R. J. Phaneuf* P.A. Bennett, Y. Hong, and S. Hörch, Physical Review Letters 78, 4605-4608, (1997).

19.  "Surface Phase Transformations in the Ni/Si(111) System Real Time Observations Using LEEM and STM," P.A. Bennett, M. Y. Lee, S. A. Parikh, K. Würmand R. J. Phaneuf, Journal of Vacuum Science and Technology A 13, 1728-1732 (1995).

18.  "Sublimation and Phase Transitions on Singular and Vicinal Si(111) Surfaces," T. M. Jung, R. J. Phaneuf and E. D. Williams, Surface Science 301, 129-135 (1994).

17.  "Reduced Background Light in Visual Low-Energy Electron Diffraction Using an Optical Bandpass Filter, "R. J. Phaneuf and H.-C. Kan, Review of Scientific Instruments 65, 3871-3872 (1994).

16. "Thermodynamics and Statistical Mechanics of the Faceting of Stepped Si(111)," E. D. Williams, R. J. Phaneuf,  J. Wei, N. C. Bartelt and T. L. Einstein Surface Science 294, 219-242 (1993).

15.  "The Crossover from Metastable to Unstable Facet Growth on Si(111)," R. J. Phaneuf,  N. C. Bartelt, E. D. Williams, W. Swiech and E. Bauer, Physical Review Letters 71, 2284-2287 (1993).

14.  "Low Energy Electron Microscopy Investigations of the Domain Growth of the (7x7) Reconstruction on Si(111)," R. J. Phaneuf, N. C. Bartelt, E. D. Williams, W. Swiech and E. Bauer, Surface Science 268, 227-237 (1992).

13.  "Low Energy Electron Microscopy Investigations of Orientational Phase Separation on Vicinal Si(111) Surfaces," R. J. Phaneuf, N. C. Bartelt, E. D. Williams, W. Swiech and E. Bauer, Physical Review Letters 67, 2986-2889 (1991).

12.  "Step Structures and Reconstructions on Vicinal Ge(111) Surfaces," T. M. Jung, R. J. Phaneuf, and E. D. Williams, Surface Science 254, 235-250 (1990).

11.  "Step-Height Tripling Transition on Vicinal Si(111)," R. J. Phaneuf and E. D. Williams, Phys. Rev. B 41, 2991-3003, (1990).

10.  "Orientational Stability of  Silicon  Surfaces," N. C. Bartelt, R. J. Phaneuf, E. D. Williams, and S. Das Sarma, Journal of Vacuum Science and Technology A 7, 1898-1905 (1989).

9.  "Comparison of LEED and STM Measurements of Vicinal Si(111),", X.-S. Wang, R. J. Phaneuf and E. D. Williams, Journal of Microscopy 152, 473-480 (1988).

8. "The Temperature Dependence of Vicinal Si(111) Surfaces," R. J. Phaneuf, E. D. Williams and N. C. Bartelt Physical Review B 38, 1984-1993 (1988).

7.  "Surface Phase Separation of Vicinal Si(111)," R.J. Phaneuf and E.D. Williams, Journal of Vacuum Science and Technology A 6, 657-657 (1988).

6.  “Metastable Structures of Si(111) Formed by Laser-Quenching,” R. J. Phaneuf and E. D. Williams, Surface Science 195, 330-340 (1988).

5.  "Surface Phase Separation of Vicinal Si(111)," R. J. Phaneuf and E. D. Williams, Physical Review Letters  58, 2563-2566 (1987).

4.  "Comparison of High-Temperature and Laser-Quenched Si(111) Using Low-Energy Electron Diffraction," R. J. Phaneuf and E. D. Williams, Physical Review B 35, 4155-4158 (1987).

3. “Low Energy Electron Diffraction and Physisorption Studies of the Ge(111) Surface”, M. B. Webb, R. J. Phaneuf and W. E. Packard, Journal of Vacuum Science and Technology A 4, 1522-1523 (1986).

2.  “A LEED Study of Ge(111): A High Temperature Incommensurate Structure”, R. J. Phaneuf and M. B. Webb, Surface Science 164, 167-195 (1985).

1.  "Current-Voltage Characteristics and Composition Profiles of Ni-Pt Silicide Schottky Diodes," A. Shepela, R. J. Phaneuf, and E. F. Kennedy, Journal of Applied Physics 51, 2928-2932 (1980).