MSE Seminar Series: Robert Stahlbush
Friday, February 26, 2016
1:00 p.m.-2:00 p.m.
Room 2110, Chemical and Nuclear Engineering Building
Naval Research Laboratory
Materials Defects in SiC and Their Effects on Power Devices
The market for silicon carbide power devices is rapidly growing and is poised to replace silicon power devices in certain power electronics markets. A key factor in the development of SiC technology has been the suppression of materials defects such as basal plane dislocations (BPDs). This talk discusses the peculiar nature of BPDs, how they destroy the performance and reliability of SiC power devices and the impressive progress made in suppressing materials defects over the last decade. A number of SiC devices are now commercially available. Further reductions of the materials defects will enable a greater variety of SiC power devices and increase their capabilities.