MSE Seminar Series: Albert Davydov

Friday, October 24, 2014
1:00 p.m.
Room 2108, Chemical and Nuclear Engineering Bldg.
JoAnne Kagle
301 405 5240

Low-Dimensional Semiconductors for Electronics, Sensors, and Energy

Albert Davydov
Materials Science & Engineering Division

In addition to conventional thin film structures, 1D and 2D nanostructures such as semiconductor nanowires and graphene-like layers have attracted considerable attention due to their unique electronic, magnetic, optical, thermal and mechanical properties, complemented with superior structural quality and high surface-to-volume ratio. Nanowires and 2D layers represent nanoscale building blocks for on-chip integration for optoelectronic, sensor, and energy applications for portable ubiquitous electronics on flexible platforms.

To realize new applications, the controlled fabrication of nanowires and 2D layers with defined geometries and electronic properties as well as their integration with planar device structures is required. This talk discusses fabrication and characterization of silicon and gallium nitride nanowire materials and devices, including single and arrayed nanowire transistors, chemical and bio- sensors, Li-ion batteries, and LEDs. A special case of developing periodic arrays of vertically aligned GaN core-shell nanostructures for p-i-n photodetectors, realized with a combination of top-down etch and subsequent chemical vapor deposition, is presented.

The 2D research is illustrated by fabrication and testing of field-effect-transistors (FETs) composed of monolayer to few-layer MoS2 thin films, where device transport characteristics are governed by inter-layer coupling and electrically active surface states.

About the Speaker
Albert Davydov received a Ph.D. in Chemistry from Moscow State University (Russia) in 1989. He joined NIST in 2005 and is now active in the area of semiconductor nanowires and 2D materials and devices. He is presently a Leader of Functional Nanostructured Materials Group, and a Project Leader on “Low-dimensional semiconductors for sensors, optoelectronics and energy applications” at the Materials Science & Engineering Division at National Institute of Standards and Technology (NIST, Gaithersburg, MD).

Dr. Davydov’s expertise is with metal and semiconductor materials analysis, bulk crystal growth, thin film deposition, and the processing and characterization of a wide range of nanostructured electronic materials and device structures, including nanowires of silicon, gallium nitride and metal oxides, and 2D layers of MoS2.  He serves as a Head of the Semiconductor Task Group for the International Centre for Diffraction Data (ICDD); Co-chair of the Reference Materials Task Group on Compound Semiconductors at ASTM; Leader of the review team for the NSF-NRI program on “Nanoelectronics for 2020 and Beyond”, and co-organizer of several nanomaterial related symposia and conferences, including chairing 6th International Conference on One-dimensional Nanostructures (ICON-2015).


Audience: Campus 

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